MtronPTI空間級(jí)組件XO5123-060R測(cè)試能力
來源：http://www.ytxiaoping.cn 作者：金洛鑫電子 2024年03月16
MtronPTI空間級(jí)組件XO5123-060R測(cè)試能力
MtronPTI提供廣泛的精密頻率和頻譜控制解決方案，包括射頻、微波和毫米波濾波器；腔體、晶體、陶瓷、集總元件（LC）和開關(guān)濾波器；高性能和高頻OCXO、集成PLL OCXOs、TCXOs、VCXOs、低抖動(dòng)和惡劣環(huán)境振蕩器和時(shí)鐘；晶體諧振器、集成微波組件（IMA）和最先進(jìn)的固態(tài)功率放大器產(chǎn)品。MtronPTI是一家上市公司（紐約證券交易所:MPTI）。
MtronPTI在衛(wèi)星平臺(tái)和載人飛船方面獲得了超過125項(xiàng)設(shè)計(jì)勝利。憑借支持低地球軌道、中地球軌道和地球同步軌道應(yīng)用的專業(yè)知識(shí)，MtronPTI麥特倫皮晶振公司擁有一支成熟的團(tuán)隊(duì)和久經(jīng)考驗(yàn)的記錄，可以滿足苛刻的空間要求。
隨著對(duì)高功率空間級(jí)發(fā)射機(jī)需求的不斷發(fā)展，高功率處理空間級(jí)射頻組件和子組件對(duì)任務(wù)的成功至關(guān)重要。由于多重放電等現(xiàn)象，這些在軌道衛(wèi)星上使用的設(shè)備的性能與它們?cè)诤Ｆ矫嫔系男阅苡泻艽蟛煌Ｒ恍┛臻g級(jí)應(yīng)用既要求在外層空間的連續(xù)運(yùn)行性能，也要求在進(jìn)入空間期間的性能，即在溫度范圍內(nèi)經(jīng)歷從環(huán)境壓力到1×10-5托的壓力變化以避免電暈放電。石英晶體振蕩器，了解進(jìn)入太空和在軌期間大功率處理射頻組件和子組件的能力對(duì)于成功的太空任務(wù)至關(guān)重要。在早期階段檢測(cè)潛在風(fēng)險(xiǎn)可以防止災(zāi)難性故障。
除了現(xiàn)有的內(nèi)部測(cè)試能力之外1為了測(cè)試空間級(jí)組件和射頻組件，MtronPTI晶振廠家投資了Spark3D等模擬工具，以在設(shè)計(jì)過程的早期階段最大限度地提高真空下的功率處理能力。MtronPTI還投資了一個(gè)高空（低壓）試驗(yàn)箱，以支持高功率處理射頻組件和子組件測(cè)試。海拔試驗(yàn)箱的加入使MtronPTI能夠在將測(cè)試產(chǎn)品暴露在接近1x10的壓力下時(shí)調(diào)節(jié)環(huán)境試驗(yàn)箱的溫度-5托。通過結(jié)合Spark3D模擬和高空測(cè)試，MtronPTI提高了任務(wù)成功的概率。
MtronPTI航天級(jí)產(chǎn)品符合美國(guó)國(guó)家標(biāo)準(zhǔn)協(xié)會(huì)/AIAA S-142-2016《航天器部件中預(yù)防多次放電擊穿的標(biāo)準(zhǔn)/手冊(cè)》。
注1 : MtronPTI廣泛的內(nèi)部測(cè)試能力包括根據(jù)MIL-STD-202的熱沖擊、方法107根據(jù)MIL-STD-202的端子強(qiáng)度、方法211根據(jù)MIL-STD-202的機(jī)械沖擊、方法213根據(jù)MIL-STD-202的總泄漏測(cè)試、方法112根據(jù)MIL-STD-202的隨機(jī)振動(dòng)、方法214A根據(jù)MIL-STD-202的氦氣、方法112根據(jù)MIL-STD-202的正弦振動(dòng)
注1 : MtronPTI廣泛的內(nèi)部測(cè)試能力包括根據(jù)MIL-STD-202的熱沖擊、方法107根據(jù)MIL-STD-202的端子強(qiáng)度、方法211根據(jù)MIL-STD-202的機(jī)械沖擊、方法213根據(jù)MIL-STD-202的總泄漏測(cè)試、方法112根據(jù)MIL-STD-202的隨機(jī)振動(dòng)、方法214A根據(jù)MIL-STD-202的氦氣、方法112根據(jù)MIL-STD-202的正弦振動(dòng)
MtronPTI空間級(jí)組件XO5123-060R測(cè)試能力
MtronPTI High Power Handling Space Level Component and Sub-Assemblies Design and Testing Capabilities
MtronPTI has over 125 design wins across satellite platforms and manned spacecraft. With expertise supporting LEO, MEO and GEO applications, MtronPTI has a well-established team and a proven track record to meet demanding space requirements.
With the evolving need for high-power space-level transmitters, high-power handling space-level RF components and sub-assemblies are instrumental for mission success. The performance of these devices used in orbiting satellites are significantly different compared to how they perform at sea level due to phenomena like multipaction. Some space-level applications require both continuous operation performance in outer space as well as performance during the assent to space, i.e. undergoing a pressure change from ambient to 1 x 10-5 Torr over temperature to avoid corona discharge. Understanding the capability of the high-power handling RF components and sub-assemblies during the assent to space and in orbit is critical for successful space missions. Detecting potential risks at an early stage prevents a catastrophic failure.
In addition to existing in-house testing capabilities1 for testing space level components and RF assemblies, MtronPTI has invested in simulation tools like Spark3D™ to maximize power handling capability under vacuum in the early stages of the design process. MtronPTI has also invested in a altitude (hypobaric) chamber to support high power handling RF components and sub-assemblies testing. The incorporation of an altitude test chamber enables MtronPTI to adjust the temperature of the environmental test chamber while exposing the product under test to pressure approaching 1 x 10-5 Torr. By combining Spark3D simulations and altitude testing, MtronPTI enhances the probability of mission success.
MtronPTI space-level products comply with ANSI/AIAA S-142-2016, Standard/Handbook for Multipactor Breakdown Prevention in Spacecraft Components.
| 產(chǎn)品編碼 | 進(jìn)口晶振 | 型號(hào) | 類型 | 頻率穩(wěn)定性 | 頻率（MHz） |
| XO5123-034R | MtronPTI晶振 | XO5123 | OCXO | ±10 ppb | 10MHz |
| XO5123-037R | MtronPTI晶振 | XO5123 | OCXO | ±10 ppb | 10MHz |
| XO5123-040R | MtronPTI晶振 | XO5123 | OCXO | ±10 ppb | 10MHz |
| XO5123-060R | MtronPTI晶振 | XO5123 | OCXO | ±0.6 ppb | 40MHz |
| XO5123-061R | MtronPTI晶振 | XO5123 | OCXO | ±5 ppb | 10MHz |
| XO5123-064R | MtronPTI晶振 | XO5123 | OCXO | ±10 ppb | 10MHz |
| XO5123-065R | MtronPTI晶振 | XO5123 | OCXO | ±0.6 ppb | 10MHz |
| XO5123-070R | MtronPTI晶振 | XO5123 | OCXO | ±2 ppb | 10MHz |
| XO2011-001R | MtronPTI晶振 | XO2011 | OCXO | ±25 ppb | 100MHz |
| XO2011-004R | MtronPTI晶振 | XO2011 | OCXO | ±40 ppb | 100MHz |
| XO2011-005R | MtronPTI晶振 | XO2011 | OCXO | ±40 ppb | 100MHz |
| XO5081-013 | MtronPTI晶振 | XO5080 | OCXO | ±30 ppb | 100MHz |
| XO5081-025 | MtronPTI晶振 | XO5080 | OCXO | ±0.05 ppm | 10MHz |
| XO5081-047R | MtronPTI晶振 | XO5080 | OCXO | ±0.5 ppm | 80MHz |
| XO5081-048SR | MtronPTI晶振 | XO5080 | OCXO | ±50 ppb | 40MHz |
| XO5081-067 | MtronPTI晶振 | XO5080 | OCXO | ±0.2 ppm | 100MHz |
| XO5082-014R | MtronPTI晶振 | XO5080 | OCXO | ±140 ppb | 10MHz |
| XO5083-033V | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5083-053R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-053R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-053V | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5084-019 | 石英晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5084-031R | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 12.8MHz |
| XO5084-057SR | MtronPTI晶振 | XO5080 | OCXO | ±29 ppb | 10MHz |
| XO5081-015R | MtronPTI晶振 | XO5080 | OCXO | ±1 ppm | 100MHz |
| XO5081-047R | MtronPTI晶振 | XO5080 | OCXO | ±0.5 ppm | 80MHz |
| XO5081-048SR | MtronPTI晶振 | XO5080 | OCXO | ±50 ppb | 40MHz |
| XO5081-062 | MtronPTI晶振 | XO5080 | OCXO | ±0.2 ppm | 100MHz |
| XO5081-067R | MtronPTI晶振 | XO5080 | OCXO | ±0.2 ppm | 100MHz |
| XO5081-068 | MtronPTI晶振 | XO5080 | OCXO | ±0.2 ppm | 100MHz |
| XO5082-016R | MtronPTI晶振 | XO5080 | OCXO | ±280 ppb | 100MHz |
| XO5082-020SR | MtronPTI晶振 | XO5080 | OCXO | ±0.3 ppm | 100MHz |
| XO5083-020 | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-028R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-046R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-051R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-052R | MtronPTI晶振 | XO5080 | OCXO | ±5 ppb | 10MHz |
| XO5083-059R | MtronPTI晶振 | XO5080 | OCXO | ±5 ppb | 10MHz |
| XO5083-064 | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-067SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5083-078SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5083-079SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5083-081R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-104R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-106R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-108R | MtronPTI晶振 | XO5080 | OCXO | ±25 ppb | 10MHz |
| XO5083-113R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-114R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-118SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
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